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DOI: 10.1055/s-2007-968587
Stable Polythiophene for Field Effect Transistors
H. Pan, Y. Li, Y. Wu, P. Liu, B. S. Ong*, S. Zhu, G. Xu
McMaster University and Xerox Research Centre of Canada, Ontario, Canada
Publication History
Publication Date:
22 May 2007 (online)
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Significance
A novel polythiophene (7) containing benzo[1,2-b:4,5-b′]dithiophene units was prepared via a ferric chloride-mediated oxidative coupling polymerization of monomer 6, which was prepared straightforwardly from dione 1 in five steps with moderate yields. Spin-coating of a solution of this polymer could produce a highly organized thin film with a close π-π stacking structure, which was characterized by AFM and X-ray diffraction studies. Field effect transistors (FET) that were fabricated on such a solution-processed thin film demonstrated a mobility of 0.15-0.25 cm2 V-1 s-1 and a current on-off ratio of 105-106, even without additional thermal annealing. Devices from this polymer also showed higher stability than those based on a regioregular poly(3-hexylthiophene).